Observation of Ga vacancies and negative ions in undoped and Mg-doped GaN bulk crystals

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 33-38

  Saarinen, K ^a   Nissila J ^a   Oila, J ^a   Ranki, V ^a   Hakala, M ^a   Puska, M J ^a   Hautojarvi P ^a   Likonen, J ^b   Suski, T ^c   Grzegory, I ^c   Lucznik, B ^c   Porowski, S ^c  

^a AALTO UNIVERSITY   (Finland)

^b VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

^c INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; ELECTRIC CHARGE; FERMI LEVEL; MAGNESIUM; NEGATIVE IONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS;

POSITRON LIFETIME SPECTROSCOPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033335177     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00400-7     Document Type: Article

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