Ultrathin HfO2 gate dielectric grown by plasma-enhanced chemical vapor deposition using Hf[OC(CH3)3]4 as a precursor in the absence of O2

Journal of Materials Research

Volumn 18, Issue 1, 2003, Pages 60-65

  Choi, Kyu Jeong ^a   Shin, Woong Chul ^a   Yoon, Soon Gil ^a  

^a Chungnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; CURRENT DENSITY; DIELECTRIC MATERIALS; FILM GROWTH; HYSTERESIS; LEAKAGE CURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

GATE DIELECTRICS;

ULTRATHIN FILMS;

EID: 0038007442     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2003.0009     Document Type: Article

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