Hafnium oxoneopentoxide as a new MOCVD precursor for hafnium oxide films

Journal of Crystal Growth

Volumn 267, Issue 3-4, 2004, Pages 529-537

  Abrutis, A ^a   Hubert Pfalzgraf, L G ^b   Pasko, S V ^a,b   Bartasyte, A ^a   Weiss, F ^c   Janickis, V ^d  

^a VILNIUS UNIVERSITY   (Lithuania)

^b UNIVERSITÉ LYON 1   (France)

^c LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^d KAUNAS UNIVERSITY OF TECHNOLOGY   (Lithuania)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Hafnium; B1. Metalorganic compounds; B1. Oxides

Indexed keywords

CRYSTAL GROWTH FROM MELT; FOURIER TRANSFORM INFRARED SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROELECTRONICS; MICROSTRUCTURE; ORGANOMETALLICS; OXIDES; REACTION KINETICS; SINGLE CRYSTALS; SOL-GELS; STOICHIOMETRY; SURFACE ROUGHNESS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

EXOTHERMIC REACTIONS; GROWTH RATES; HYDROLYTIC SUSCEPTIBILITY; SURFACE ETCHING;

HAFNIUM COMPOUNDS;

EID: 2942516059     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.04.012     Document Type: Article

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