Detection efficiencies and generalized breakdown probabilities for nanosecond-gated near infrared single-photon avalanche photodiodes

IEEE Journal of Quantum Electronics

Volumn 42, Issue 2, 2006, Pages 137-145

  Ramirez, David A ^a   Hayat, Majeed M ^b   Karve, Gauri ^c   Campbell, Joe C ^c   Torres, Sergio N ^a   Saleh, Bahaa E A ^d   Teich, Malvin C ^d  

^a UNIVERSITY OF CONCEPCIÓN   (Chile)

^b University of New Mexico   (United States)

^c The University of Texas at Austin   (United States)

^d Boston University   (United States)

Author keywords

Avalanche photodiodes (APDs); Breakdown probability; Dark count; Dead space; Detection effeciency; Geiger mode; Heterostructure APDs; Impact ionization; InAIAs; InP; Single photon detection

Indexed keywords

ELECTRIC FIELDS; ELECTRIC POTENTIAL; HETEROJUNCTIONS; IMPACT IONIZATION; OPTIMIZATION; PROBABILITY; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM PHOSPHIDE;

AVALANCHE PHOTODIODES (APDS); BREAKDOWN PROBABILITY; DARK COUNT; DEAD SPACE; DETECTION EFFICIENCY; GEIGER MODE; SINGLE-PHOTON DETECTION;

AVALANCHE DIODES;

EID: 30644479144     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2005.861627     Document Type: Article

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