SCOPUS 정보 검색 플랫폼

Volumn 86, Issue 6, 2005, Pages 1-3

Origin of dark counts in In 0.53 Ga 0.47As/In 0.52Al 0.48As avalanche photodiodes operated in Geiger mode

(12) Karve, G a Wang, S a Ma, F a Li, X a Campbell, J C a Ispasoiu, R G b Bethune, D S c Risk, W P c Kinsey, G S d Boisvert, J C d Isshiki, T D d Sudharsanan, R d

a The University of Texas at Austin (United States)

b Credence Systems Corporation (United States)

c IBM ALMADEN RESEARCH CENTER (United States)

d Spectrolab Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AN AVALANCHE PHOTODIODES (APD); DETECTOR STRUCTURES; GEIGER MODES; TEMPERATURE DEPENDENCE;

BOUNDARY CONDITIONS; COMPUTER SIMULATION; GEIGER COUNTERS; PHOTODIODES; POISSON DISTRIBUTION; QUENCHING; SEMICONDUCTING INDIUM COMPOUNDS; TEMPERATURE MEASUREMENT;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 21044450540 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1861498 Document Type: Article

Times cited : (46)

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