Optimized breakdown probabilities in Al0.6Ga0.4As-GaAs heterojunction avalanche photodiodes

IEEE Electron Device Letters

Volumn 25, Issue 9, 2004, Pages 599-601

  Kwon, Oh Hyun ^a   Hayat, Majeed M ^a   Campbell, Joe C ^b   Saleh, Bahaa E A ^c   Teich, Malvin C ^c  

^a MSC01 1070   (United States)

^b The University of Texas at Austin   (United States)

^c Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; ELECTRIC BREAKDOWN; ELECTRONS; GEIGER COUNTERS; HETEROJUNCTIONS; IMPACT IONIZATION; OPTIMIZATION; PHOTONS; PROBABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

ALUMINUM GALLIUM ARSENIDE; AVALANCHE PHOTODIODES; BREAKDOWN PROBABILITY; GEIGER MODE; INITIAL ENERGY EFFECT; PHOTON COUNTING;

PHOTODIODES;

EID: 4444351781     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.834489     Document Type: Article

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