InGaAs/InAlAs avalanche photodiode with undepleted absorber

Applied Physics Letters

Volumn 82, Issue 13, 2003, Pages 2175-2177

  Li, Ning ^a   Sidhu, Rubin ^a   Li, Xiaowei ^a   Ma, Feng ^a   Zheng, Xiaoguang ^a   Wang, Shuling ^a   Karve, Gauri ^a   Demiguel, Stephane ^a   Holmes Jr , Archie L ^a   Campbell, Joe C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; BANDWIDTH; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; GAIN MEASUREMENT; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

AVALANCHE PHOTODIODES;

PHOTODIODES;

EID: 0037475023     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1559437     Document Type: Article

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