Geiger mode operation of an In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode

IEEE Journal of Quantum Electronics

Volumn 39, Issue 10, 2003, Pages 1281-1286

  Karve, Gauri ^a   Zheng, Xiaoguang ^a   Zhang, Xiaofeng ^a   Li, Xiaowei ^a   Li, Ning ^a   Wang, Shuling ^a   Ma, Feng ^a   Holmes Jr , Archie ^a   Campbell, Joe C ^a   Kinsey, G S ^b   Boisvert, J C ^b   Isshiki, T D ^b   Sudharsanan, R ^b   Bethune, Donald S ^c   Risk, William P ^c  

^a The University of Texas at Austin   (United States)

^b Spectrolab Inc   (United States)

^c IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

Avalanche photodiode; Geige mode; Impact ionization; Photodetector; Photon counting

Indexed keywords

AVALANCHE DIODES; ELECTRIC BREAKDOWN; PHOTONS; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR COUNTERS;

AVALANCHE PHOTODIODE; GEIGER MODE OPERATION; LOW TEMPERATURE PHOTON COUNTING; SINGLE PHOTON DETECTION;

PHOTODIODES;

EID: 0141952904     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2003.817244     Document Type: Article

References (20)

1. W. P. Risk and D. S. Bethune, "Quantum cryptography using autocompensating fiber-optic interferometers," Opt. Photon. News, vol. 13, no. 7, p. 26, July 2002.
2. B. F. Levine, C. G. Bethea, and J. Campbell, "1.52 μm room temperature photon counting optical time domain reflectometer," Electron. Lett., vol. 21, pp. 194-196, 1985.
3. A. Lacaita, F. Zappa, S. Cova, and P. Lovati, "Single-photon detection beyond 1 μm: Performance of commercially available InGaAs/InP detectors," Appl. Opt., vol. 35, no. 16, pp. 2986-2996, June 1996.
4. H. Dautet, P. Deschamps, B. Dion, A. D. MacGregor, D. MacSween, R. J. McIntyre, C. Trottier, and P. W. Webb, "Photon counting techniques with silicon avalanche photodiodes," Appl. Opt., vol. 32, no. 21, p. 3894, July 1993.
5. A. Lacaita, M. Ghioni, and S. Cova, "Double epitaxy improves single-photon avalanche diode performance," Electron. Lett., vol. 25, pp. 841-843, June 1989.
6. L. Duraffourg, J. M. Merolla, J. P. Goedgebuer, N. Butterlin, and W. T. Rhodes, "Photon counting in the 1540-nm wavelength region with a germanium avalanche photodiode," IEEE J. Quantum Electron., vol. 37, pp. 75-79, Jan. 2001.
7. P. A. Hiskett, G. S. Buller, A. Y. Loudon, J. M. Smith, I. Gontjo, A. C. Walker, P. D. Townsend, and M. J. Robertson, "Performance and design of InGaAs/InP photodiodes for single photon counting at 1.55 μm," Appl. Opt., vol. 39, no. 36, pp. 6818-6829, Dec. 2000.
8. J. G. Rarity, T. E. Wall, K. D. Ridley, P. C. M. Owens, and P. R. Tapster, "Single-photon counting for the 1300-1600-nm range by use of Peltier-cooled and passively quenched InGaAs avalanche photodiodes," Appl. Opt., vol. 39, no. 36, pp. 6746-6753, Dec. 2000.
9. D. Stucki, G. Ribordy, A. Stefanov, H. Zbinden, J. G. Rarity, and T. Wall, "Photon counting for quantum key distribution with Peltier cooled InGaAs/InP APDs," J. Modern Opt., vol. 48, no. 13, pp. 1967-1981, 2001.
10. K. A. McIntosh, J. P. Donnelly, D. C. Oakley, A. Napoleon, S. D. Calawa, L. J. Mahoney, K. M. Molvar, E. K. Duerr, S. H. Groves, and D. C. Shaver, "InGaAsP/InP avalanche photodiodes for photon counting at 1.06 μm," Appl. Phys. Lett., vol. 81, no. 14, pp. 2505-2507, Sept. 2002.
11. M. M. Hayat, U. Sakoglu, O.-H. Kwon, S. Wang, J. C. Campbell, B. E. A. Saleh, and M. C. Teich, "Breakdown probabilities for thin heterostructure avalanche photodiodes," IEEE J. Quantum Electron., vol. 39, pp. 179-185, Jan. 2003.
12. M. C. McIntyre, "A new look at impact ionization-Part I: A theory of gain, noise, breakdown probability, and frequency response," IEEE Trans. Electron. Devices, vol. 46, pp. 1623-1631, Aug. 1999.
13. C. Lenox, H. Nie, P. Yuan, G. Kinsey, A. L. Holmes Jr., B. G. Streetman, and J. C. Campbell, "Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz," IEEE Photon. Technol. Lett., vol. 11, pp. 1162-1164, Sept. 1999.
14. G. S. Kinsey, J. C. Campbell, and A. G. Dentai, "Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 GHz," IEEE Photon. Technol. Lett., vol. 13, pp. 842-844, Aug. 2001.
15. H. Nie, K. A. Anselm, C. Lenox, P. Yuan, C. Hu, G. Kinsey, B. G. Streetman, and J. C. Campbell, "Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product," IEEE Photon. Technol. Lett, vol. 10, pp. 409-411, Mar. 1998.
16. 0.48 As avalanche photodiode array," IEEE J. Quantum Electron., vol. 38, pp. 1536-1540, Nov. 2002.
17. S. Cova, M. Ghioni, A. Lacaita, C. Samori, and F. Zappa, "Avalanche photodiodes and quenching circuits for single-photon detection," Appl. Opt., vol. 35, no. 12, pp. 1956-1976, Apr. 1996.
18. D. S. Bethune and W. P. Risk, "An autocompensating fiber-optic quantum cryptography system based on polarization splitting of light," IEEE J. Quantum Electron., vol. 36, pp. 340-347, Mar. 2000.
19. B. F. Levine, C. G. Bethea, and J. C. Campbell, "Near room temperature 1.3 μm single photon counting with a InGaAs avalanche photodiode," Electron. Lett., vol. 20, no. 14, pp. 596-597, June 1984.
20. S. Wang, F. Ma, X. Li, G. Karve, X. Zheng, and J. C. Campbell, "Analysis of breakdown probabilities in avalanche photodiodes using a history-dependent analytical model," Appl. Phy. Lett., vol. 82, no. 12, pp. 1971-1973, Mar. 2003, to be published.