InGaAsP/InP avalanche photodiodes for photon counting at 1.06 μm

Applied Physics Letters

Volumn 81, Issue 14, 2002, Pages 2505-2507

  McIntosh, K A ^a   Donnelly, J P ^a   Oakley, D C ^a   Napoleone, A ^a   Calawa, S D ^a   Mahoney, L J ^a   Molvar, K M ^a   Duerr, E K ^a   Groves, S H ^a   Shaver, D C ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS CONDITIONS; DARK COUNT RATE; GEIGER MODES; INGAASP/INP; PHOTON COUNTING; PHOTON DETECTION EFFICIENCY; ROOM TEMPERATURE;

AVALANCHE PHOTODIODES;

PHOTONS;

EID: 79955995532     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1509469     Document Type: Article

References (18)

1. W. G. Oldham, R. R. Samuelson, and P. Antognetti, IEEE Trans. Electron Devices 19, 1056 (1972). etd IETDAI 0018-9383
2. V. O'Connor and D. Phillips, Time-Correlated Single Photon Counting (Academic, London, 1984).
3. S. Cova, M. Ghioni, A. Lacaita, C. Samori, and F. Zappa, Appl. Opt. 35, 1956 (1996). apo APOPAI 0003-6935
4. Hamamatsu R5509 PMT specification sheet (Hamamatsu Corporation, Bridgewater, N.J., 2001).
5. R. A. La Rue, G. A. Davis, D. Pudvay, K. A. Costello, and V. W. Aebi, IEEE Electron Device Lett. 20, 126 (1999). edl EDLEDZ 0741-3106
6. K. A. Costello, V. W. Aebi, G. A. Davis, R. A. La Rue, and R. Weiss, Proc. SPIE 2550, 177 (1995). spi PSISDG 0277-786X
7. SPCM-AQR series data sheet (PerkinElmer Optoelectronics, Quebec, Canada).
8. A. Y. Loudon, P. A. Hiskett, G. S. Buller, R. T. Carline, D. C. Herbert, W. Y. Leong, and J. G. Rarity, Opt. Lett. 27, 219 (2002). opl OPLEDP 0146-9592
9. B. F. Levine, C. G. Bethea, and J. C. Campbell, Electron. Lett. 20, 597 (1984). ell ELLEAK 0013-5194
10. F. Zappa, A. Lacaita, S. Cova, and P. Webb, Opt. Lett. 19, 846 (1994). opl OPLEDP 0146-9592
11. G. Ribordy, J.-D. Gautier, J. Zbinden, and N. Gisin, Appl. Opt. 37, 2272 (1998). apo APOPAI 0003-6935
12. J. G. Rarity, R. E. Wall, K. D. Ridley, P. C. M. Owens, and P. R. Tapster, Appl. Opt. 39, 6746 (2000). apo APOPAI 0003-6935
13. P. A. Hiskett, G. S. Buller, A. Y. Loudon, J. M. Smith, I. Gontijo, A. C. Walker, P. D. Townsend, and M. J. Robertson, Appl. Opt. 39, 6818 (2000). apo APOPAI 0003-6935
14. I. Prochazka, Appl. Opt. 40, 6012 (2001). apo APOPAI 0003-6935
15. R. J. McIntyre, IEEE Trans. Electron Devices 20, 637 (1973). etd IETDAI 0018-9383
16. S. C. Palmateer, S. H. Groves, J. W. Caunt, and D. L. Hovey, J. Electron. Mater. 18, 645 (1989). jem JECMA5 0361-5235
17. R. K. Ahrenkiel, R. Ellingson, S. Johnston, and M. Wanlass, Appl. Phys. Lett. 72, 3470 (1998). apl APPLAB 0003-6951
18. R. J. McIntyre, IEEE Trans. Electron Devices 46, 1623 (1999). etd IETDAI 0018-9383