Theoretical study of breakdown probabilities in single photon avalanche diodes

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 2, Issue , 2003, Pages 773-774

  Ng, J S ^a   Tan, C H ^a   David, J P R ^a   Rees, G J ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; IMPACT IONIZATION; MATHEMATICAL MODELS; PHOTONS; PROBABILITY; SEMICONDUCTOR MATERIALS; SIGNAL DETECTION;

BREAKDOWN PROBABILITIES; OVERBIAS RATIO; SINGLE PHOTON AVALANCHE DIODES;

AVALANCHE DIODES;

EID: 0344465785     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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