Performance and design of InGaAs/InP photodiodes for single-photon counting at 1.55 μm

Applied Optics

Volumn 39, Issue 36, 2000, Pages 6818-6829

  Hiskett, Philip A ^a   Buller, Gerald S ^a   Loudon, Alison Y ^a   Smith, Jason M ^a   Gontijo, Ivair ^a,b   Walker, Andrew C ^a   Townsend, Paul D ^c   Robertson, Michael J ^c  

^a HERIOT WATT UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c Corning Research Centre ^*  (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; PHOTOMULTIPLIERS; PHOTONS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

PHOTON-COUNTING MODE;

AVALANCHE DIODES;

EID: 0038600698     PISSN: 1559128X     EISSN: 21553165     Source Type: Journal    
DOI: 10.1364/AO.39.006818     Document Type: Article

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