Additive soft-lithographic patterning of submicrometer- and nanometer-scale large-area resists on electronic materials

Nano Letters

Volumn 5, Issue 12, 2005, Pages 2533-2537

  Ahn, Heejoon ^a,b   Lee, Keon Jae ^b   Shim, Anne ^c   Rogers, John A ^a,b,d   Nuzzo, Ralph G ^a,b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b United States of America   (United States)

^c DOW CORNING CORPORATION   (United States)

^d Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIVE SOFT-LITHOGRAPHIC PATTERNING; LATENT IMAGE; ORGANIC PLANARAZATION LAYER; ULTRATHIN POLY(DIMETHYLSILOXANE);

IMAGE PROCESSING; LITHOGRAPHY; MULTILAYERS; NANOSTRUCTURED MATERIALS; POLYMERS; REACTIVE ION ETCHING; SUBSTRATES;

ADDITIVES;

BAYSILON; DIMETICONE; NANOMATERIAL; SILICON DIOXIDE; SILICONE DERIVATIVE;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; CRYSTALLIZATION; ELECTRONICS; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; PHOTOGRAPHY; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; DIMETHYLPOLYSILOXANES; ELECTRONICS; MEMBRANES, ARTIFICIAL; MINIATURIZATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; PHOTOGRAPHY; SILICON DIOXIDE; SILICONES; SURFACE PROPERTIES;

EID: 30644469277     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl051894u     Document Type: Article

References (42)

1. Waser, R. Nanoelectronics and Information Technology: Advanced Electronic Materials and Novel Devices; Wiley-VCH: Weinheim, 2003.
2. Turley, J. The Essential Guide to Semiconductors; Prentice-Hall: Englewood Cliffs, NJ, 2002.
3. International Technology Roadmap for Semiconductors; 2004 edition.
4. (a) Sze, S. M. VLSI Technology; McGraw-Hill: New York, 1988.
5. (b) Jego, C.; Casseau, E.; Martin, E. Proc. Des. Circuits Integr. Syst. Conf. 2000, 507.
6. (a) Ito, T.; Okazaki, S. Nature 2000, 406, 1027.
7. (b) Fay, B. Microelectron. Eng. 2002, 61-62, 11.
8. Mulkens, J.; Flagello, D.; Streefkerk, B.; Graeupner, P. J. Microlithogr., Microfabr., Microsyst. 2004, 3, 104.
9. Chatterjee, P. K. Proc. IEEE 1998, 86, 176.
10. (a) Zankovych, S.; Hoffmann, T.; Seekamp, J.; Bruch, J.-U.; Sotomayor Torres. C. M. Nanotechnology 2001, 12, 91.
11. (b) Chou, S. Y.; Krauss, P. R.; Renstrom, P. J. Science 1996, 272, 85.
12. (c) Li, M.; Wang, J.; Zhuang, S. Y.; Chou, S. Y. Appl. Phys. Lett. 2000, 76, 673.
13. (a) Xia, Y.; Whitesides, G. M. Annu. Rev. Mater. Sci. 1998, 28, 153.
14. (b) Rogers, J. A.; Nuzzo, R. G. Mater. Today, 2005, 8, 50.
15. (c) Mirkin, C. A.; Rogers, J. A. MRS Bull. 2001, 26, 506.
16. (a) Jeon, S.; Park, J.-U.; Cirelli, R.; Yang, S.; Heitzman, C. E.; Braun, P. V.; Kenis, P. J. A.; Rogers, J. A. Proc. Natl. Acad. Sci. U.S.A. 2004, 101, 12428.
17. (b) Schmid, H.; Wolf, H.; Allenspach, R.; Riel, H.; Karg, S.; Michel, B. ; Delamarche, E. Adv. Funct. Mater. 2003, 13, 145.
18. (a) Xia, Y.; McClelland, J. J.; Gupta, R.; Qin, D.; Zhao, X. M., Sohn, L. L.; Celotta, R. J.; Whitesides, G. M. Adv. Mater. 1997, 9, 147.
19. (b) Menard, E.; Bilhaut, L.; Zaumseil, J.; Rogers, J. A. Langmuir 2004, 20, 6871.
20. (a) Jackman, R. J.; Rogers, J. A.; Whitesides, G. M.; IEEE Trans. Magn. 1997, 33, 2501.
21. (b) Erhardt, M. K.; Jin, H. C.; Abelson, J. R.; Nuzzo, R. G. Chem. Mater. 2000, 12, 3306.
22. (c) Lee, K.; Fosser, K. A.; Nuzzo, R. G. Adv. Funct. Mater. 2005, 15, 557.
23. (a) Kumar, A.; Whitesides, G. M. Appl. Phys. Lett. 1993, 63, 2002.
24. (b) Biebuyck, H. A.; Larsen, N. B.; Delamarche, E.; Michel. B. IBM J. Res. Dev. 1997, 41, 159.
25. (c) Wilbur, J. L.; Kumar, A.; Kim, E.; Whitesides, G. M. Adv. Mater. 1994, 6, 600.
26. Xia, Y.; Kim, E.; Zhao, X.-M.; Rogers, J. A.; Prentiss, M.; Whitesides, G. M. Science 1996, 273, 347.
27. (a) Kim, E.; Xia, Y.; Whitesides, G. M. Nature 1995, 376, 581.
28. (b) Xia, Y.; Whitesides, G. M. Polym. Mater. Sci. Eng. 1997, 77, 596.
29. (a) Anderson, J. R.; Chiu, D. T.; Jackman, R. J.; Cherniavskaya, O.; Mcdonald, J. C.; Wu, H.; Whitesides, S. H.; Whitesides, G. M. Anal. Chem. 2000, 14, 3158.
30. (b) Jackman, R. J.; Brittain, S. T.; Adams, A.; Prentiss, M. G.; Whitesides, G. M. Science 1998, 280, 2089.
31. Xia, Y.; Qin, D.; Whitesides, G. M. Adv. Mater. 1996, 8, 1015.
32. Childs, W. R.; Nuzzo, R. G. J. Am. Chem. Soc. 2002, 124, 13583.
33. (a) Childs, W. R.; Nuzzo, R. G. Adv. Mater. 2004, 16, 1323.
34. (b) Childs, W. R.; Nuzzo, R. G. Langmuir 2005, 21, 195.
35. (a) Odom, T. W.; Love, J. C.; Wolfe, D. B.; Paul, K. E.; Whitesides, G. M. Langmuir 2002, 18, 5314.
36. (b) Schmid, H.; Michel, B. Macromolecules 2000, 33, 3042.
37. Tachi, S.; Tsujimoto, K.; Okudaira, S. Appl. Phys. Lett. 1988, 52, 616.
38. (a) Khang, D.-Y.; Yoon, H.; Lee, H. H. Adv. Mater. 2001, 13, 749.
39. (b) Behl, M.; Seekamp, J.; Zankovych, S.; Sotomayer-Torres, C. M.; Zentel, R.; Ahopelto, J. Adv. Mater. 2002, 14, 588.
40. (c) McAlpine, M. C.; Friedman, R. S.; Lieber, C. M. Nano Lett. 2003, 3, 443.
41. See, for example: (a) Rogers, J. A.; Whitesides, G. M. J. Vac. Sci. Technol., B 1998, 16, 59.
42. (b) Lee, T.; Jeon, S.; Maria, J.; Zaumseil, J.; J. Hsu.; Rogers, J. A. Adv. Funct. Mater. 2005, 15, 1435.