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Volumn 406, Issue 6799, 2000, Pages 1027-1031

Pushing the limits of lithography

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE; ELECTRON BEAM; ELECTRONICS; MICROELECTRODE; MICROPROCESSOR; OPTICAL DENSITY; PRIORITY JOURNAL; REVIEW; SEMICONDUCTOR; TECHNIQUE;

EID: 0034738987     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/35023233     Document Type: Review
Times cited : (777)

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    • 0.3 μm optical lithography using a phase shifting mask
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    • Electron-beam cell projection lithography: A new high throughput electron direct-writing technology using a tailored Si aperture
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  • 8
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    • Berger, S. D. et al. Projection electron beam lithography: a new approach, J. Vac. Sci. Technol. B 9, 2996-2999 (1991).
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    • Berger, S.D.1
  • 9
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    • Pfeiffer, H. C. & Stickel, W. PRIVAIL - an E-beam stepper with variable axis immersion lenses. Microclectron. Eng. 27, 143-146 (1995).
    • (1995) Microclectron. Eng. , vol.27 , pp. 143-146
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  • 10
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    • Pattering characteristics of a chemically-amplified negative resist in synchrotron radiation lithography
    • Deguchi, K. et al. Pattering characteristics of a chemically-amplified negative resist in synchrotron radiation lithography, Jpn. J. Appl. Phys. 31, 2954-2958 (1992).
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    • in the press
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.