Replica molding using polymeric materials: A practical step toward nanomanufacturing

Advanced Materials

Volumn 9, Issue 2, 1997, Pages 147-149

  Xia, Younan ^a   McClelland, Jabez J ^b   Gupta, Rajeev ^b   Qin, Dang ^a   Zhao, Xiao Mei ^a   Sohn, Lydia L ^c   Celotta, Robert J ^b   Whitesides, George M ^a  

^a HARVARD UNIVERSITY   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c PRINCETON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICE MANUFACTURE; MAGNETIC DEVICES; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; OPTICAL DEVICES;

REPLICA MOLDING;

POLYMERS;

EID: 0031072203     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.19970090211     Document Type: Article

References (22)

1. Engineering a Small World: From Atomic Manipulation to Microfabrication, A Special Section in Science 1991, 254, 1300.
2. For e-beam writing see M. W. Moreau, Semiconductor Lithography: Principles and Materials, Plenum, New York 1988, J. Fujita, H. Watanabe, Y. Ochiai, S. Manako, J. S. Tsai, S. Matsui, Appl. Phys. Lett. 1995, 66, 3065. For X-ray lithography, see P. N. Dunn, Solid State Technol. 1994, June, 49. K. Early, M. L. Schattenbury, H. I. Smith, Microelectron. Eng. 1990, 11, 317. For proximal-probe lithography, see J. A. Dagata, Science 1995, 270, 1625. E. S. Snow, P. M. Campbell, Appl. Phys. Lett. 1994, 64, 1932. M. Wendel, S. Kükn, H. Lorenz, J. P. Kottbans, M. Holland, Appl. Phys. Lett. 1994, 65, 1775. A. Kobayash, F. Grey, R. S. Williams, M. Aono, Science 1993, 259, 1724.
3. For e-beam writing see M. W. Moreau, Semiconductor Lithography: Principles and Materials, Plenum, New York 1988, J. Fujita, H. Watanabe, Y. Ochiai, S. Manako, J. S. Tsai, S. Matsui, Appl. Phys. Lett. 1995, 66, 3065. For X-ray lithography, see P. N. Dunn, Solid State Technol. 1994, June, 49. K. Early, M. L. Schattenbury, H. I. Smith, Microelectron. Eng. 1990, 11, 317. For proximal-probe lithography, see J. A. Dagata, Science 1995, 270, 1625. E. S. Snow, P. M. Campbell, Appl. Phys. Lett. 1994, 64, 1932. M. Wendel, S. Kükn, H. Lorenz, J. P. Kottbans, M. Holland, Appl. Phys. Lett. 1994, 65, 1775. A. Kobayash, F. Grey, R. S. Williams, M. Aono, Science 1993, 259, 1724.
4. For e-beam writing see M. W. Moreau, Semiconductor Lithography: Principles and Materials, Plenum, New York 1988, J. Fujita, H. Watanabe, Y. Ochiai, S. Manako, J. S. Tsai, S. Matsui, Appl. Phys. Lett. 1995, 66, 3065. For X-ray lithography, see P. N. Dunn, Solid State Technol. 1994, June, 49. K. Early, M. L. Schattenbury, H. I. Smith, Microelectron. Eng. 1990, 11, 317. For proximal-probe lithography, see J. A. Dagata, Science 1995, 270, 1625. E. S. Snow, P. M. Campbell, Appl. Phys. Lett. 1994, 64, 1932. M. Wendel, S. Kükn, H. Lorenz, J. P. Kottbans, M. Holland, Appl. Phys. Lett. 1994, 65, 1775. A. Kobayash, F. Grey, R. S. Williams, M. Aono, Science 1993, 259, 1724.
5. For e-beam writing see M. W. Moreau, Semiconductor Lithography: Principles and Materials, Plenum, New York 1988, J. Fujita, H. Watanabe, Y. Ochiai, S. Manako, J. S. Tsai, S. Matsui, Appl. Phys. Lett. 1995, 66, 3065. For X-ray lithography, see P. N. Dunn, Solid State Technol. 1994, June, 49. K. Early, M. L. Schattenbury, H. I. Smith, Microelectron. Eng. 1990, 11, 317. For proximal-probe lithography, see J. A. Dagata, Science 1995, 270, 1625. E. S. Snow, P. M. Campbell, Appl. Phys. Lett. 1994, 64, 1932. M. Wendel, S. Kükn, H. Lorenz, J. P. Kottbans, M. Holland, Appl. Phys. Lett. 1994, 65, 1775. A. Kobayash, F. Grey, R. S. Williams, M. Aono, Science 1993, 259, 1724.
6. For e-beam writing see M. W. Moreau, Semiconductor Lithography: Principles and Materials, Plenum, New York 1988, J. Fujita, H. Watanabe, Y. Ochiai, S. Manako, J. S. Tsai, S. Matsui, Appl. Phys. Lett. 1995, 66, 3065. For X-ray lithography, see P. N. Dunn, Solid State Technol. 1994, June, 49. K. Early, M. L. Schattenbury, H. I. Smith, Microelectron. Eng. 1990, 11, 317. For proximal-probe lithography, see J. A. Dagata, Science 1995, 270, 1625. E. S. Snow, P. M. Campbell, Appl. Phys. Lett. 1994, 64, 1932. M. Wendel, S. Kükn, H. Lorenz, J. P. Kottbans, M. Holland, Appl. Phys. Lett. 1994, 65, 1775. A. Kobayash, F. Grey, R. S. Williams, M. Aono, Science 1993, 259, 1724.
7. For e-beam writing see M. W. Moreau, Semiconductor Lithography: Principles and Materials, Plenum, New York 1988, J. Fujita, H. Watanabe, Y. Ochiai, S. Manako, J. S. Tsai, S. Matsui, Appl. Phys. Lett. 1995, 66, 3065. For X-ray lithography, see P. N. Dunn, Solid State Technol. 1994, June, 49. K. Early, M. L. Schattenbury, H. I. Smith, Microelectron. Eng. 1990, 11, 317. For proximal-probe lithography, see J. A. Dagata, Science 1995, 270, 1625. E. S. Snow, P. M. Campbell, Appl. Phys. Lett. 1994, 64, 1932. M. Wendel, S. Kükn, H. Lorenz, J. P. Kottbans, M. Holland, Appl. Phys. Lett. 1994, 65, 1775. A. Kobayash, F. Grey, R. S. Williams, M. Aono, Science 1993, 259, 1724.
8. For e-beam writing see M. W. Moreau, Semiconductor Lithography: Principles and Materials, Plenum, New York 1988, J. Fujita, H. Watanabe, Y. Ochiai, S. Manako, J. S. Tsai, S. Matsui, Appl. Phys. Lett. 1995, 66, 3065. For X-ray lithography, see P. N. Dunn, Solid State Technol. 1994, June, 49. K. Early, M. L. Schattenbury, H. I. Smith, Microelectron. Eng. 1990, 11, 317. For proximal-probe lithography, see J. A. Dagata, Science 1995, 270, 1625. E. S. Snow, P. M. Campbell, Appl. Phys. Lett. 1994, 64, 1932. M. Wendel, S. Kükn, H. Lorenz, J. P. Kottbans, M. Holland, Appl. Phys. Lett. 1994, 65, 1775. A. Kobayash, F. Grey, R. S. Williams, M. Aono, Science 1993, 259, 1724.
9. For e-beam writing see M. W. Moreau, Semiconductor Lithography: Principles and Materials, Plenum, New York 1988, J. Fujita, H. Watanabe, Y. Ochiai, S. Manako, J. S. Tsai, S. Matsui, Appl. Phys. Lett. 1995, 66, 3065. For X-ray lithography, see P. N. Dunn, Solid State Technol. 1994, June, 49. K. Early, M. L. Schattenbury, H. I. Smith, Microelectron. Eng. 1990, 11, 317. For proximal-probe lithography, see J. A. Dagata, Science 1995, 270, 1625. E. S. Snow, P. M. Campbell, Appl. Phys. Lett. 1994, 64, 1932. M. Wendel, S. Kükn, H. Lorenz, J. P. Kottbans, M. Holland, Appl. Phys. Lett. 1994, 65, 1775. A. Kobayash, F. Grey, R. S. Williams, M. Aono, Science 1993, 259, 1724.
10. Y. Xu, S. A. Miller, N. C. MacDonald, Appl. Phys. Lett. 1995, 67, 2305.
11. S. Y. Chou, P. R. Krauss, P. J. Renstrom, Appl. Phys. Lett. 1995, 67, 3114; Science 1996, 272, 85.
12. S. Y. Chou, P. R. Krauss, P. J. Renstrom, Appl. Phys. Lett. 1995, 67, 3114; Science 1996, 272, 85.
13. C. M. Martin, Acc. Chem. Res. 1995, 28, 61.
14. M. C. Hutley, Diffraction Gratings. Academic Press, New York 1982. B. L. Ramos, S. J. Choquette, Anal. Chem. 1996, 68, 1245.
15. M. C. Hutley, Diffraction Gratings. Academic Press, New York 1982. B. L. Ramos, S. J. Choquette, Anal. Chem. 1996, 68, 1245.
16. H. C. Haverkorn van Rijsewijk, P. E. J. Legierse, G. E. Thomas, Philips Tech. Rev. 1982, 40, 287.
17. D. A. Kiewit, Rev. Sci. Instrum. 1973, 44, 1741.
18. Replication of features with micrometer-scale dimensions has also been used in microscopy to aid in visualization of fragile structures. "Electron Microscopy Preparation Technology Accessories and Consumables", Catalogue No. 5B, Bal-TEC Products Inc., Middlebury, CT, 1992.
19. Y. Xia, G. M. Whitesides, Adv. Mater. 1995, 7, 471.
20. Y. Xia, E. Kim, X.-M. Zhao, J. A. Rogers, M. Prentiss, G. M. Whitesides, Science 1996, 273, 347.
21. J. J. McClelland, R. E. Scholten, E. C. Palm, R. J. Celotta, Science 1993, 262, 877.
22. Certain commercial equipment, instruments or materials are identified in this paper in order to adequately specify the experimental procedure. Such identification does not imply recommendation or endorsement, nor does it imply that the materials or equipment identified are necessarily the best available for the purpose.