Shape of InAs quantum dots grown on the GaAs (1̄1̄3̄) B surface

Applied Physics Letters

Volumn 80, Issue 25, 2002, Pages 4744-4746

  Suzuki, T ^a   Temko, Y ^a   Jacobi, K ^a  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS; HIGH INDEX SURFACE; IN-SITU; INAS QUANTUM DOTS; MIRROR SYMMETRY;

GALLIUM ARSENIDE; INDIUM ARSENIDE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS;

OPTICAL WAVEGUIDES;

EID: 79956047194     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1489087     Document Type: Article

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