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Applied Physics Letters

Volumn 81, Issue 17, 2002, Pages 3251-3253

Filamentation and linewidth enhancement factor in InGaAs quantum dot lasers

(5) Smowton, P M a Pearce, E J a Schneider, H C b Chow, W W b Hopkinson, M c

a CARDIFF UNIVERSITY (United Kingdom)

b SANDIA NATIONAL LABORATORIES (United States)

c UNIVERSITY OF SHEFFIELD (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; BROAD-AREA LASERS; COULOMB COUPLINGS; FILAMENTATION; INHOMOGENEOUS BROADENING; INJECTION LEVELS; LINEWIDTH ENHANCEMENT FACTOR; MICROSCOPIC LEVELS; NEAR-FIELD; QUANTUM DOT DEVICES; QUANTUM WELL; QUANTUM WELL DEVICE;

QUANTUM DOT LASERS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM WELL LASERS;

EID: 79956053238 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1516236 Document Type: Article

Times cited : (69)

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