Spontaneous emission and threshold characteristics of 1.3-μm InGaAs-GaAs quantum-dot GaAs-based lasers

IEEE Journal of Quantum Electronics

Volumn 35, Issue 8, 1999, Pages 1238-1246

  Deppe, D G ^a   Huffaker, D L ^a   Csutak, S ^a   Zou, Z ^a   Park, G ^a   Shchekin, O B ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; OPTICAL WAVEGUIDES; OSCILLATORS (ELECTRONIC); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SPONTANEOUS EMISSION; TEMPERATURE;

HARMONIC OSCILLATOR; LASING CHARACTERISTICS; NONRADIATIVE RECOMBINATION; QUANTUM DOT LASERS;

SEMICONDUCTOR LASERS;

EID: 0033171401     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.777226     Document Type: Article

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