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Electronics Letters

Volumn 39, Issue 1, 2003, Pages 58-59

Importance of Auger recombination in InAs 1.3 μm quantum dot lasers

(6) Marko, I P a,c Andreev, A D a Adams, A R a Krebs, R b Reithmaier, J P b Forchel, A b

a UNIVERSITY OF SURREY (United Kingdom)

b UNIVERSITY OF WÜRZBURG (Germany)

c B I STEPANOV INSTITUTE OF PHYSICS (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; OPTICAL COMMUNICATION; OPTICAL WAVEGUIDES; PHOTONS; SELF ASSEMBLY; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SPONTANEOUS EMISSION;

AUGER RECOMBINATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037426891 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:20030014 Document Type: Article

Times cited : (26)

References (6)

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4
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- Experimental analysis of temperature dependence in 1.3-m AlGaInAs-InP strained MQW lasers
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6
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