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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 871-875

Quantum dots for VCSEL applications at λ = 1.3 μm

(5) Ledentsov, N a,b Bimberg, D a Ustinov, V M b Alferov, Z I b Lott, J A c

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

b IOFFE INSTITUTE (Russian Federation)

c AIR FORCE INSTITUTE OF TECHNOLOGY (United States)

Author keywords

Microcavity; Molecular beam eptiaxy; Quantum dot; Semiconductor laser

Indexed keywords

CONTINUOUS WAVE LASERS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS;

VERTICAL CAVITY SURFACE-EMITTING LASERS (VCSEL);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036493099 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/S1386-9477(02)00223-0 Document Type: Article

Times cited : (31)

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