Output power saturation in InAs/GaAs quantum dot lasers

Physica Status Solidi C: Conferences

Volumn , Issue 4, 2003, Pages 1351-1354

  Wasiak, M ^a   Bugajski, M ^b   Sarzala, R P ^a   MacKowiak, P ^a   Czyszanowski, T ^a   Nakwaski, W ^a  

^a LODZ UNIVERSITY OF TECHNOLOGY   (Poland)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER RELAXATION; INAS/GAAS QUANTUM DOTS; LASING PROPERTIES; LEVEL POPULATIONS; OUTPUT POWER; RATE-EQUATION MODELS; SATURATION EFFECTS; SELF-ASSEMBLED;

SEMICONDUCTOR QUANTUM DOTS;

EID: 3042683062     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303091     Document Type: Conference Paper

References (7)

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3. M. Bugajski et al., Europ. Workshop Gallium Arsenide-based lasers at 1300 nm, Lecce (Italy), 16-19 September 2001.
4. A. Fiore et al., IEEE J. Quantum Electron. 37, 1050 (2001).
5. J. X. Chen et al., J. Appl. Phys. 91, 6710 (2002).
6. P. G. Eliseev et al., IEEE J. Sel. Top. Quantum Electron. 7, 135 (2001).
7. R. P. Sarzaa et al., Europ. Workshop Gallium Arsenide-based lasers at 1300 nm, Lecce (Italy), 16-19 September 2001.