Optical gain saturation effects in InAs/GaAs self-assembled quantum dots

Optica Applicata

Volumn 32, Issue 3, 2002, Pages 291-299

  Wasiak, Michal ^a   Bugajski, Maciej ^b   Machowska Podsiadło, Elzbieta ^c   Ochalski, Tomasz ^b   Ka̧tcki, Jerzy ^b   Sarzaļa, Robert P ^a   Maćkowiak, Paweł ^a   Czyszanowski, Tomasz ^a   Nakwaski, Włodzimierz ^a   Chen, J X ^d   Oesterle, Ursula ^d   Fiore, Andrea ^d   Ilegems, Mark ^d  

^a LODZ UNIVERSITY OF TECHNOLOGY   (Poland)

^b Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^c RZESZOW UNIVERSITY OF TECHNOLOGY   (Poland)

^d EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; LASER OPTICS; NUMERICAL ANALYSIS; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STIMULATED EMISSION; TRANSMISSION ELECTRON MICROSCOPY;

RATE EQUATIONS; TWO-STATE LASING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036934565     PISSN: 00785466     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (6)

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