Structural and electrooptical characteristics of quantum dots emitting at 1.3 μm on gallium arsenide

IEEE Journal of Quantum Electronics

Volumn 37, Issue 8, 2001, Pages 1050-1058

  Fiore, Andrea ^b   Oesterle, Ursula ^b   Stanley, Ross P ^b   Houdré, Romuald ^b   Lelarge, François ^b   Ilegems, Marc ^b   Borri, Paola ^a,c,d   Langbein, Wolfgang ^c,d   Birkedal, D ^d   Hvam, Jørn M ^d   Cantoni, Marco ^b   Bobard, Fabienne ^b  

^a IEEE

^b EPFL   (Switzerland)

^c TU DORTMUND UNIVERSITY   (Germany)

^d TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

Epitaxial growth; Light emitting diodes; Quantum dots; Semiconductor lasers

Indexed keywords

ELECTROLUMINESCENCE; ELECTROOPTICAL EFFECTS; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; TEMPERATURE;

INDIUM GALLIUM ARSENIDE QUANTUM WELLS; PHOTOLUMINESCENCE LINEWIDTH; SELF-ASSEMBLED INDIUM ARSENIDE QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035421256     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.937394     Document Type: Article

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