Defect engineering and atomic relocation processes in impurity-free disordered GaAs and AlGaAs

Materials Research Society Symposium - Proceedings

Volumn 799, Issue , 2003, Pages 103-114

  Deenapanray, P N K ^a   Krispin, M ^b   Meyer, W E ^c   Tan, H H ^a   Jagadish, C ^a   Auret, F D ^c  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF AUGSBURG   (Germany)

^c UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); ELECTRON EMISSION; EPITAXIAL GROWTH; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SPECTROSCOPY;

DEFECT ENGINEERING; DISORDERED LAYERS; IMPURITY-FREE DISORDERING (IFD);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 3042631537     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-799-z2.6     Document Type: Conference Paper

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