A comparison of low-energy as ion implantation and impurity-free disordering induced defects in N-type gaas epitaxial layers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 3, 2003, Pages 1158-1163

  Deenapanray, Prakash N K ^d   Svensson, B G ^b,c   Tan, H H ^a   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF OSLO   (Norway)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^d NONE

Author keywords

Defects; Diffusion; GaAs; Impurity free disordering; Schottky barrier

Indexed keywords

CAPACITANCE; CHARGE TRANSFER; DIFFUSION; ION IMPLANTATION; SCHOTTKY BARRIER DIODES; SILICA;

EPITAXIAL LAYERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037616063     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1158     Document Type: Article

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