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Volumn 55, Issue 23, 1997, Pages 15581-15586

Arsenic interstitials and interstitial complexes in low-temperature grown GaAs

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Indexed keywords


EID: 0000005040     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.55.15581     Document Type: Article
Times cited : (37)

References (29)
  • 3
    • 0041897551 scopus 로고
    • F. W. Smith, in Low Temperature (LT) GaAs and Related Materials, edited by G. L. Witt, R. Calawa, U. Mishra, and E. Weber, MRS Symposia Proceedings No. 241 (Materials Research Society, Pittsburgh, 1992), p. 3.
    • (1992) Low Temperature (LT) GaAs and Related Materials , pp. 3
    • Smith, F.1
  • 13
    • 51249177517 scopus 로고
    • For a review of several semiconductor systems, see C. G. Morgan-Pond, J. Electron. Mater. 20, 399 (1991).
    • (1991) J. Electron. Mater. , vol.20 , pp. 399
    • Morgan, C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.