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Volumn 19, Issue 5, 2001, Pages 1962-1966

Impurity-free intermixing of GaAs/AIGaAs quantum wells using SiOx capping: Effect of nitrous oxide flow rate

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; DIFFUSION; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HETEROJUNCTIONS; HYDROGEN; OXYGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SILANES;

EID: 0035439930     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (23)

References (35)
  • 1
    • 0038365611 scopus 로고    scopus 로고
    • Semiconductor Quantum Wells Intermixing
    • Gordon and Breach, Amsterdam
    • See, for example, Semiconductor Quantum Wells Intermixing, Optoelectronic Properties of Semiconductors and Superlattices, Vol. 8, edited by E. H. Li (Gordon and Breach, Amsterdam, 2000);
    • (2000) Optoelectronic Properties of Semiconductors and Superlattices , vol.8
    • Li, E.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.