Towards a better understanding of the operative mechanisms underlying impurity-free disordering of GaAs: Effect of stress

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 1 SPEC., 2003, Pages 198-203

  Doshi, Sachin ^a   Deenapanray, Prakash N K ^a   Tan, H H ^a   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPRESSIVE STRESS; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION; NITROGEN OXIDES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; SILICA;

ARSENIC-ANTISITE; IMPURITY-FREE DISORDERING; NITROUS OXIDE FLOW RATE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037207709     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1535927     Document Type: Article

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