Study of intermixing in a GaAs/AlGaAs quantum-well structure using doped spin-on silica layers

Applied Physics Letters

Volumn 80, Issue 7, 2002, Pages 1171-1173

  Fu, L ^a   V d Heijden, R W ^a   Tan, H H ^a   Jagadish, C ^a   Dao, L V ^b   Gal, M ^b  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BAKING TEMPERATURE; DEFECT ENGINEERING; DOPING CONCENTRATION; GA-DOPED; GAAS/ALGAAS; IMPURITY FREE VACANCY DISORDERING; KEY PARAMETERS; QUANTUM WELL STRUCTURES; SILICA LAYERS; SPIN-ON; SPIN-ON GLASS;

GALLIUM; PHOSPHORUS; QUANTUM WELL LASERS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SILICA; SILICON COMPOUNDS; SPIN GLASS;

MIXING;

EID: 79956016020     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1449522     Document Type: Article

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