Pulsed anodic oxidation of GaAs for impurity-free interdiffusion of GaAs/AlGaAs quantum wells

Surface and Interface Analysis

Volumn 29, Issue 11, 2000, Pages 754-760

  Deenapanray, Prakash N K ^a   Fu, L ^a   Petravic, Mladen ^a   Jagadish, C ^a   Gong, Bin ^b   Lamb, Robert N ^b  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; EPITAXIAL GROWTH; INTERDIFFUSION (SOLIDS); RAPID THERMAL ANNEALING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM GALLIUM ARSENIDE; PULSED ANODIC OXIDATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034321361     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/1096-9918(200011)29:11<754::AID-SIA924>3.0.CO;2-D     Document Type: Article

References (27)

1. Li EH. Semiconductor Quantum Wells Intermixing (Opto-electronic Properties of Semiconductors and Superlattices), vol. 8. Gordon and Breach: Amsterdam, 2000.
2. Li EH. Quantum Well Intermixing for Photonics. Milestones Series. SPIE: Bellingham, 1997.
3. Marsh JH. Semicond. Sci. Technol. 1993; 8: 1136.
4. Kapon E, Stoffel NG, Dobisz EA, Bhat R. Appl. Phys. Lett. 1988; 52: 351.
5. Lee ASW, Li EH. Appl. Phys. Lett. 1996; 69: 3581.
6. Bryce AC, Camacho F, Avrutin EA, Marsh JH. IEEE J. Quantum Electron. 1997; 33: 1784.
7. Yuan S, Kim Y, Jagadish C, Burke PT, Gal M, Zou J, Cai DQ, Cockayne DJH, Cohen RM. Appl. Phys. Lett. 1997; 70: 1269.
8. Cohen RM, Li G, Jagadish C, Burke PT, Gal M. Appl. Phys. Lett. 1998; 73: 803.
9. Das U, Kakkar P, Barik S. In Proce. 10th International Workshop on the Physics of Semiconductor Devices, Kumar V, Agarwal SK (eds). Allied Publishers: New Delhi, 2000; 149.
10. Grove MJ, Hudson DA, Zory PS, Dalby RJ, Harding CM, Rosenderg A. J. Appl. Phys. 1994; 76: 587.
11. Hasegawa H, Hartnagel L. J. Electrochem. Soc. 1976; 123: 713.
12. Fischer CW, Teare SW. J. Appl. Phys. 1990; 67: 2608.
13. Burton RS, Schlesinger TE, Holmgren DJ, Smith SC, Burnham RD. Appl. Phys. Lett. 1992; 60: 1776.
14. Lang DV. J. Appl. Phys. 1974; 45: 3014.
15. Bernstein RW, Borg A, Husby H, Fimland B-O, Grepstad JK. Appl. Surf. Sci. 1992; 56-58: 74.
16. Choi WJ, Lee S, Kim Y, Woo D, Kim SK, Kim SH, Lee JI, Kang KN, Chu JH, Yu SK, Seo JC, Kim D, Cho K. Appl. Phys. Lett. 1995; 67: 3438.
17. Deenapanray PNK, Tan HH, Cohen MI, Gaff K, Petravic M, Jagadish C, J. Electrochem. Soc. 2000; 147: 1950.
18. Cohen RM. Mater. Sci. Eng. 1997; R20: 167.
19. Hu SM. Mater. Sci. Eng. 1994; R13: no. 3/4.
20. Mitonneau A, Martin GM, Mircea A. Electron. Lett. 1977; 13: 666.
21. Fonash SJ, Ashok S, Singh R. Appl. Phys. Lett. 1981; 39: 423.
22. Deenapanray PNK, Auret FD, Myburg G. J. Vac. Sci. Technol. B 1998; 16: 1873.
23. Goodman SA, Auret FD, Deenapanray PNK, Myburg G. Jpn. J. Appl. Phys. 1998; 37: L10.
24. Ma QY, Schmidt MT, Wu X, Evans HL, Yang ES. J. Appl. Phys. 1988; 64: 2469.
25. Thurmond CD, Schwartz GP, Kammlott GW, Schwartz B. J. Electrochem. Soc. 1980; 127: 1366.
26. Murarka SP. Appl. Phys. Lett. 1975; 26: 180.
27. Linde DR. CRC Handbook of Chemistry and Physics, (74th edn). CRC: Boca Raton, 1995; section 5.