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Volumn 81, Issue 5, 1997, Pages 2445-2447

Suppression of quantum well intermixing in GaAs/AlGaAs laser structures using phosphorus-doped SiO2 encapsulant layer

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001335369     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364295     Document Type: Article
Times cited : (44)

References (16)
  • 11
    • 85033176096 scopus 로고    scopus 로고
    • private communication
    • E. V. K. Rao (private communication).
    • Rao, E.V.K.1
  • 12
    • 0003666012 scopus 로고
    • Wiley, New York, and references therein
    • S. K. Ghandhi, VLSI Fabrication Principles (Wiley, New York, 1994), pp. 530-532 and references therein.
    • (1994) VLSI Fabrication Principles , pp. 530-532
    • Ghandhi, S.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.