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Volumn 80, Issue 23, 2002, Pages 4351-4353
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Impurity-free disordering mechanisms in GaAs-based structures using doped spin-on silica layers
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Author keywords
[No Author keywords available]
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Indexed keywords
GAAS;
GAAS-BASED STRUCTURES;
GAAS/ALGAAS QUANTUM WELL;
IMPURITY-FREE DISORDERING;
SILICA LAYERS;
SPIN-ON;
ARSENIC;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
DEFECTS;
GALLIUM ARSENIDE;
SEMICONDUCTOR QUANTUM WELLS;
SILICA;
X RAY PHOTOELECTRON SPECTROSCOPY;
SEMICONDUCTING GALLIUM;
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EID: 79956003212
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1484244 Document Type: Article |
Times cited : (17)
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References (12)
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