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Volumn 68, Issue 14, 1996, Pages 1939-1941

Effect of encapsulant material on the diffusion of beryllium in molecular beam epitaxy gallium arsenide

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0342816535     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115632     Document Type: Article
Times cited : (10)

References (13)
  • 2
    • 22244446262 scopus 로고    scopus 로고
    • SUPREM-IV.GS: Two Dimensional Process Simulation for Silicon and Gallium Arsenide, edited by S. E. Hansen and M. D. Deal (Stanford University, Palo Alto, CA, 1993).
    • SUPREM-IV.GS: Two Dimensional Process Simulation for Silicon and Gallium Arsenide, edited by S. E. Hansen and M. D. Deal (Stanford University, Palo Alto, CA, 1993).
  • 7
    • 0025786369 scopus 로고    scopus 로고
    • T. Y. Tan, U. Gösele, and S. Yu, Critical Rev. Solid State Mater. Sci. 17, 47 (1991).
    • T. Y. Tan, U. Gösele, and S. Yu, Critical Rev. Solid State Mater. Sci. 17, 47 (1991).
  • 8
    • 22244482303 scopus 로고    scopus 로고
    • B. Tuck, Atomic Diffusion in III-V Semiconductors (Adam Hilger, Bristol, 1988).
    • B. Tuck, Atomic Diffusion in III-V Semiconductors (Adam Hilger, Bristol, 1988).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.