Deep-level transient spectroscopy study of electron traps in rapid thermally annealed SiO2-capped n-type GaAs layers grown by metalorganic chemical vapour deposition

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 776-779

  Deenapanray, P N K ^a   Lay, M ^a   Aberg D ^b   Tan, H H ^a   Svensson, B G ^b,c   Auret, F D ^d   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c UNIVERSITY OF OSLO   (Norway)

^d UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

Deep level transient spectroscopy; Defects; GaAs; Impurity free disordering

Indexed keywords

CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM ARSENIDE; SILICA;

IMPURITY-FREE DISORDERING (IFD);

ELECTRON TRAPS;

EID: 0035672007     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00836-5     Document Type: Article

References (8)