Electronic and isochronal annealing properties of electron traps in rapid thermally annealed SiO2-capped n-type GaAs epitaxial layers

Journal of Applied Physics

Volumn 88, Issue 9, 2000, Pages 5255-5261

  Deenapanray, P N K ^a   Tan, H H ^a   Jagadish, C ^a   Auret, F D ^b  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012447503     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1314907     Document Type: Article

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