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Volumn 92, Issue 7, 2002, Pages 3579-3583

Suppression of interdiffusion in GaAs/AlGaAs quantum-well structure capped with dielectric films by deposition of gallium oxide

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC CAPPING LAYERS; DIELECTRIC CAPS; GAAS; GAAS/ALGAAS; GAAS/ALGAAS QUANTUM WELL; GALLIUM OXIDES; IMPURITY FREE VACANCY DISORDERING; MASK MATERIALS; QUANTUM WELL STRUCTURES; THERMAL STRESS EFFECTS; VACANCY DIFFUSION;

EID: 18644384833     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1503857     Document Type: Article
Times cited : (30)

References (27)
  • 16
    • 0035439930 scopus 로고    scopus 로고
    • jv2 JVTBD9 1071-1023
    • J. Vac. Sci. Technol. B 19, 1962 (2001). jv2 JVTBD9 1071-1023
    • (2001) J. Vac. Sci. Technol. B , vol.19 , pp. 1962


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.