The influence of the annealing sequence on p+/n junctions observed by scanning capacitance microscopy

Applied Physics Letters

Volumn 84, Issue 23, 2004, Pages 4705-4707

  Chang, M N ^a   Chen, C Y ^a   Wan, W W ^b   Liang, J H ^b  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; BORON; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; DIFFUSION; LASER BEAMS; PHOTOLITHOGRAPHY; PHOTOVOLTAIC EFFECTS; REACTIVE ION ETCHING; SECONDARY ION MASS SPECTROMETRY; SUPERLATTICES;

ANNIHILATION; PHOTOPERTURBATIONS; SCANNING CAPACITANCE MICROSCOPY (SCM); TETRAETHYLORTHOSILICATE (TEOS);

SEMICONDUCTOR JUNCTIONS;

EID: 3042596210     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1762692     Document Type: Article

References (22)

1. K. W. Abraham, C. C. Williams, J. Slinkman, and H. K. Wickramasinghe, J. Vac. Sci. Technol. B 9, 703 (1991).
2. J. J. Kopanski, J. F. Marchiando, D. W. Berning, R. Alvis, and H. E. Smith, J. Vac. Sci. Technol. B 16, 339 (1998).
3. V. V. Zavyalov, J. S. McMurray, and C. C. Williams, J. Appl. Phys. 85, 7774 (1999).
4. M. L. O'Malley, G. L. Timp, W. Timp, S. V. Moccio, J. P. Garno, and R. N. Kleiman, Appl. Phys. Lett. 74, 3672 (1999).
5. C. Y. Nakakura, D. L. Hetherington, M. R. Shaneyfelt, P. J. Shea, and A. N. Erickson, Appl. Phys. Lett. 75, 2319 (1999).
6. M. N. Chang, C. Y. Chen, F. M. Pan, T. Y. Chang, and T. F. Lei, Electrochem. Solid-State Lett. 5, 069 (2002).
7. C. C. Leu, C. Y. Chen, C. H. Chien, M. N. Chang, F. Y. Hsu, and C. T. Hu, Appl. Phys. Lett. 82, 3493 (2003).
8. P. J. Hansen, Y. E. Strausser, A. N. Erickson, E. J. Tarsa, P. Kozodoy, E. G. Brazel, J. P. Ibbetson, U. Mishra, V. Narayanamurti, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. 72, 2247 (1998).
9. H. Chen, R. M. Feenstra, R. S. Goldman, C. Silfvenius, and G. Landgren, Appl. Phys. Lett. 72, 1727 (1998).
10. J. Smoliner, B. Basnar, S. Golka, E. Gornik, B. Löffler, M. Schatzmayr, and H. Enichlmair, Appl. Phys. Lett. 79, 3182 (2001).
11. R. C. Barrett and C. F. Quate, J. Appl. Phys. 70, 2725 (1991).
12. M. Dreyer and R. Wiesendanger, Appl. Phys. A: Mater. Sci. Process. 61, 357 (1995).
13. J. J. Kopanski, J. F. Marchiando, and J. R. Lowney, J. Vac. Sci. Technol. B 14, 242 (1996).
14. N. Nakagiri, T. Yamanoto, and H. Sugimura, J. Vac. Sci. Technol. B 14, 887 (1996).
15. M. N. Chang, C. Y. Chen, F. M. Pan, J. H. Lai, W. W. Wan, and J. H. Liang, Appl. Phys. Lett. 82, 3955 (2003).
16. J. Isenbart, A. Born, and R. Wiesendanger, Appl. Phys. A: Mater. Sci. Process. 72, S243 (2001).
17. D. Goghero, V. Raineri, and F. Giannazzo, Appl. Phys. Lett. 81, 1824 (2002).
18. L. Shao, X. Wang, H. Chen, J. Liu, J. Bennett, L. Larsen, and W.-K. Chu, Electrochem. Solid-State Leu. 6, G82 (2003).
19. L. Shao, X. Wang, I. Rusakova, H. Chen, J. Liu, J. Bennett, L. Larsen, J. Jin, P. A. W. van der Heide, and W.-K. Chu, J. Appl. Phys. 92, 5788 (2002).
20. H. S. Chao, S. W. Crowder, P. B. Griffin, and J. D. Plummer, J. Appl. Phys. 79, 2352 (1996).
21. A. Agarwal, H.-J. Gossmann, D. J. Eaglesham, S. B. Hemer, A. T. Fiory, and T. E. Haynes, Appl. Phys. Lett. 74, 2435 (1999).
22. S. N. Hong, IEEE Electron Device Lett. 20, 83 (1999).