0.2-μm p+-n Junction Characteristics Dependent on Implantation and Annealing Processes

IEEE Electron Device Letters

Volumn 20, Issue 2, 1999, Pages 83-85

  Hong, Shin Nam ^a  

^a Hankuk Aviation University   (South Korea)

Author keywords

Annealing; Ion implantation; Shallow junctions

Indexed keywords

ARSENIC; CRYSTALLINE MATERIALS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE; ION IMPLANTATION; LEAKAGE CURRENTS; RAPID THERMAL ANNEALING; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; THERMAL CYCLING;

FURNACE ANNEALING (FA);

SEMICONDUCTOR JUNCTIONS;

EID: 0033080271     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.740659     Document Type: Article

References (6)

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