Stability studies of ultrashallow junction formed by low energy boron implant and spike annealing

Journal of Applied Physics

Volumn 92, Issue 10, 2002, Pages 5788-5792

  Shao, Lin ^a   Wang, Xuemei ^a   Rusakova, Irene ^a   Chen, Hui ^a   Liu, Jiarui ^a   Bennett, Joe ^b   Larson, Larry ^b   Jin, Jianyue ^c   Van Der Heide, P A W ^a   Chu, Wei Kan ^a  

^a UNIVERSITY OF HOUSTON   (United States)

^b SEMATECH   (United States)

^c VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANOMALOUS BEHAVIOR; ANOMALOUS DIFFUSION; B ATOMS; B DIFFUSION; BORON IMPLANTS; DEVICE PERFORMANCE; DIFFUSION RATE; FURNACE ANNEALING; INTERSTITIALS; LOW ENERGIES; NATIVE OXIDES; NEAR SURFACE REGIONS; NITROGEN AMBIENT; SPIKE ANNEAL; SPIKE ANNEALING; STABILITY STUDY; THERMAL PROCESS; ULTRA SHALLOW JUNCTION;

BORON; DIFFUSION;

ANNEALING;

EID: 18744397814     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1513206     Document Type: Article

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