Study of interface states and oxide quality to avoid contrast reversal in scanning capacitance microscopy

Applied Physics Letters

Volumn 81, Issue 10, 2002, Pages 1824-1826

  Goghero, Didier ^a   Raineri, Vito ^a   Giannazzo, Filippo ^b  

^a CNR IMM   (Italy)

^b INFM and Physics Department   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

HYSTERESIS MEASUREMENTS; INTERFACE STATE; MICRO-ROUGHNESS; MONOTONIC BEHAVIOR; SCANNING CAPACITANCE MICROSCOPY; SMOOTH SURFACE; STATE CONCENTRATION;

SURFACE ROUGHNESS;

CAPACITANCE;

EID: 79956043493     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1499228     Document Type: Article

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