Stability of ultrashallow junction formed by low-energy boron implant and spike-annealing. Problem and solution

Electrochemical and Solid-State Letters

Volumn 6, Issue 6, 2003, Pages

  Shao, Lin ^a   Wang, Xuemei ^a   Chen, Hui ^a   Liu, Jiarui ^a   Bennett, Joe ^b   Larsen, Larry ^b   Chu, Wei Kan ^a  

^a UNIVERSITY OF HOUSTON   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; DIFFUSION; ELECTRON ENERGY LEVELS; ION IMPLANTATION; NITROGEN; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SILICON WAFERS;

DOPANT STABILIZATION; LOW-ENERGY BORON IMPLANT; MEGAELECTRONVOLT IMPLANTATION; SPIKE ANNEALING; ULTRASHALLOW JUNCTION;

SEMICONDUCTOR JUNCTIONS;

EID: 0038476161     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1570631     Document Type: Article

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