The physical principles of scanning capacitance spectroscopy

Applied Physics A: Materials Science and Processing

Volumn 72, Issue 8, 2001, Pages

  Isenbart, J ^a   Born, A ^a   Wiesendanger, R ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC POTENTIAL; OXIDATION; PROBES; SENSORS;

CHARGE CARRIER DISTRIBUTION; HYSTERESIS EFFECT; SCANNING CAPACITANCE SPECTROSCOPY;

SPECTROSCOPY;

EID: 0034854306     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390100793     Document Type: Article

References (25)

1. http://www.semichips.org/
2. http://www.bell-labs.com/news/1999/november/15/1.html
3. D.K. Schroder: Semiconductor Material and Device Characterization (John Wiley, New York 1990)
4. C.C. Williams, J. Slinkman, W.P. Hough, H.K. Wickramasinghe: J. Vac. Sci. Technol. B 9, 703 (1991)
5. A.C. Diebold, M.R. Kump, J.J. Kopanski, D.G. Seiler: J. Vac. Sci. Technol. B 14, 196 (1996)
6. J.J. Kopanski, J.F. Marchiando, J.R. Lowney: J. Vac. Sci. Technol. B 14, 242 (1996)
7. Y. Huang, C.C. Williams, M.A. Wendman: J. Vac. Sci. Technol. A 14, 1168 (1996)
8. A. Born, R. Wiesendanger: Appl. Phys. A 66, 421 (1998)
9. V.V. Zavyalov, J.S. McMurray, C.C. Williams: Rev. Sci. Instrum. 70, 158 (1999)
10. M.L. O'Malley, G.L. Timp, S.V. Moccio, J.P. Garno, R.N. Kleiman: Appl. Phys. Lett. 74, 272 (1999)
11. R.N. Kleiman, M.L. O'Malley, F.H. Baumann, J.P. Garno, G.L. Timp: J. Vac. Sci. Technol. B 18, 2034 (2000)
12. E.H. Nicollian, J.R. Brews: MOS (Metal Oxide Semiconductor) Physics and Technology (John Wiley, New York 1982)
13. mod are applied to the sample backside, all graphs of measured and simulated C(V) and dC/dV(V) curves in this paper assume the voltages to be applied to the tip. This results only in a shift of the phase
14. P. Avouris, T. Hertel, R. Martel: Appl. Phys. Lett. 71, 285 (1997)
15. A. Born: Nanotechnologische Anwendungen der Rasterkapazitätsmikroskopie und verwandter Rastersondenmethoden, PhD Thesis, University of Hamburg 2000 [http://www.sub.uni-hamburg.de/ disse/233/]
16. M. Tabe: Appl. Phys. Lett. 45, 1073 (1984)
17. M. Niwano, M. Suemitsu, Y. Ishibashi, Y. Takeda, N. Miyamoto, K. Honma: J. Vac. Sci. Technol. A 10, 3171 (1992)
18. http://www.ise.ch/
19. The device simulator is restricted to small signal capacitance measurements of Vprob = ±10 mV
20. prob at the tip is unknown due to the high frequency
21. J.F. Marchiando, J.J. Kopanski, J. Albers: J. Vac. Sci. Technol. B 18, 414 (2000)
22. J.J. Kopanski, J.F. Marchiando, B.G. Rennex: J. Vac. Sci. Technol. B 18, 409 (2000)
23. H. Edwards, R. McGlothlin, R. San Martin, E. U, M. Gribelyuk, R. Mahaffy, C.K. Shih, R.S. List, V.A. Ukraintsev: Appl. Phys. Lett. 72, 698 (1998)
24. H. Edwards, V.A. Ukraintsev, R. San Martin, F.S. Johnson, P. Menz, S. Walsh, S. Ashburn, K.S. Wills, K. Harvey, M.-C. Chang: J. Appl. Phys. 87, 1485 (2000)
25. N. Nakagiri, T. Yamamoto, H. Sugimura, Y. Suzuki: J. Vac. Sci. Technol. B 14, 887 (1996)