Low-temperature metalorganic chemical vapor deposition of Al2O3 for advanced complementary metal-oxide semiconductor gate dielectric applications

Journal of Materials Research

Volumn 18, Issue 8, 2003, Pages 1868-1876

  Skordas, Spyridon ^a   Papadatos, Filippos ^a   Nuesca, Guillermo ^a   Sullivan, John J ^a   Eisenbraun, Eric T ^a   Kaloyeros, Alain E ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; DIELECTRIC DEVICES; GATES (TRANSISTOR); LOW TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOS DEVICES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

GATE DIELECTRIC APPLICATIONS; HYDROGEN CONCENTRATION; HYDROGEN PROFILING; OXYGEN SOURCE REACTANTS; POSTANNEALING;

ALUMINA;

EID: 0141502488     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2003.0261     Document Type: Article

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