Stoichiometric and non-stoichiometric films in the Si-O-N system: Mechanical, electrical, and dielectric properties

Materials Science and Engineering: B

Volumn 97, Issue 1, 2003, Pages 54-58

  Torrison, L ^a   Tolle, J ^a   Kouvetakis, J ^a   Dey, S K ^a   Gu, D ^a   Tsong, I S T ^a   Crozier, P A ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Chemical vapor deposition; Disiloxane; Silicon oxynitride

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; HARDNESS; PERMITTIVITY; SEMICONDUCTING SILICON COMPOUNDS;

STOICHIOMETRIC FILMS;

THIN FILMS;

EID: 0037437754     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00402-6     Document Type: Article

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