Effects of Hf contamination on the properties of silicon oxide metal-oxide-semiconductor devices

Applied Physics Letters

Volumn 81, Issue 26, 2002, Pages 5018-5020

  Kang, Chang Seok ^a   Onishi, Katsunori ^a   Kang, Laegu ^a,b   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; HAFNIUM COMPOUNDS; IONS; LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES;

FLAT-BAND VOLTAGE;

MOS DEVICES;

EID: 0037164897     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1532755     Document Type: Article

References (12)

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