Evaluation of mobility in the MOSFET with high leakage current

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 2003, Pages 91-94

  Tonomura, O ^a   Shimamoto, Y ^a   Torii, K ^a   Hiratani, M ^a   Saito, S ^a   Yugami, J ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CAPACITANCE; CMOS INTEGRATED CIRCUITS; ELECTRIC FREQUENCY MEASUREMENT; ELECTRIC LINES; LEAKAGE CURRENTS;

VOLTAGE DROP;

MOSFET DEVICES;

EID: 0037628099     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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4. S. Saito, K. Torii, M. Hiratani, and T. Onai, to appear in Appl. Phys. Lett. 2002.
5. S. Takagi, A. Toriumi, M. Iwase, and H. Tango, IEEE Trans. Electron Devices, vol. 41, p. 2357, 1994