Latchup in merged triple well structure

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 129-136

  Voldman, S ^a   Gebreselasie, E ^a   Zierak, M ^a   Hershberger, D ^a   Collins, D ^a   Feilchenfeld, N ^a   St Onge, S ^a   Dunn, J ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

CMOS; ESD; Latchup; Silicon Germanium (SiGe); Triple Well

Indexed keywords

EID: 28744452785     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (59)

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