-
1
-
-
0038040245
-
Radiation induced regeneration through the P-N junction isolation in monolithic IC's
-
October
-
K. Kinoshito, C.T. Kleiner, and E.D. Johnson, "Radiation Induced Regeneration Through the P-N Junction Isolation in Monolithic IC's," IEEE Transaction of Nuclear Science, NS-12, October 1965, pp.83-90.
-
(1965)
IEEE Transaction of Nuclear Science
, vol.NS-12
, pp. 83-90
-
-
Kinoshito, K.1
Kleiner, C.T.2
Johnson, E.D.3
-
2
-
-
28744449246
-
Study of transient radiation induced latchup
-
(Contract N0014-66-C-0347) No. GA-7969, May
-
R. A. Poll, and J.F. Leavy, "Study of Transient Radiation Induced Latchup," General Atomic Division Final Report (Contract N0014-66-C-0347) No. GA-7969, May 1967.
-
(1967)
General Atomic Division Final Report
-
-
Poll, R.A.1
Leavy, J.F.2
-
3
-
-
0014617202
-
Radiation induced integrated circuit latchup
-
Dec.
-
J.F. Leavy, and R.A. Poll "Radiation Induced Integrated Circuit Latchup," IEEE Trans. On Nuclear Science, NS-16, Dec. 1969, pp. 96-103.
-
(1969)
IEEE Trans. on Nuclear Science
, vol.NS-16
, pp. 96-103
-
-
Leavy, J.F.1
Poll, R.A.2
-
4
-
-
0014617233
-
Transient radiation response of complementary symmetry MOS integrated circuits
-
December
-
W.J. Dennehy, A. G. Holmes-Seidle, and W.F. Leipold, "Transient Radiation Response of Complementary Symmetry MOS Integrated Circuits, "IEEE Trans. On Nuclear Science, NS-16, December 1969, pp.114-119.
-
(1969)
IEEE Trans. on Nuclear Science
, vol.NS-16
, pp. 114-119
-
-
Dennehy, W.J.1
Holmes-Seidle, A.G.2
Leipold, W.F.3
-
5
-
-
0030127490
-
The influence of VLSI technology evolution on radiation-induced latchup in space systems
-
A. H. Johnston, "The Influence of VLSI Technology Evolution on Radiation-Induced Latchup in Space Systems," IEEE Transactions on Nuclear Science, Vol. 43, 1996, pp. 505-521.
-
(1996)
IEEE Transactions on Nuclear Science
, vol.43
, pp. 505-521
-
-
Johnston, A.H.1
-
7
-
-
0030166446
-
A new approach to the analysis of SEU and SEL data to obtain the sensitive volume thickness
-
J. Barak, J. Levinson, A. Akkerman, M. Hass, M. Victoria, A. Zentner, D. David, O. Even, and Y. Lfishitz, "A New Approach to the Analysis of SEU and SEL Data to Obtain the Sensitive Volume Thickness," IEEE Transactions on Nuclear Science, Vol. 43, 1996, pp. 907-911.
-
(1996)
IEEE Transactions on Nuclear Science
, vol.43
, pp. 907-911
-
-
Barak, J.1
Levinson, J.2
Akkerman, A.3
Hass, M.4
Victoria, M.5
Zentner, A.6
David, D.7
Even, O.8
Lfishitz, Y.9
-
8
-
-
0031549073
-
Simulataneous imaging of upsets and latchup sensitive regions of a static RAM
-
B. E. Fischer, M. Schlogl, J. Barak, E. Adler, and S. Metzger, "Simulataneous Imaging of Upsets and Latchup Sensitive Regions of a Static RAM, Nuc. Instrumentation and Methods in Phys Res. B, Vol. 130 1997, pp.478-485.
-
(1997)
Nuc. Instrumentation and Methods in Phys Res. B
, vol.130
, pp. 478-485
-
-
Fischer, B.E.1
Schlogl, M.2
Barak, J.3
Adler, E.4
Metzger, S.5
-
9
-
-
11044230439
-
New insight into proton-induced latchup: Experiment and modeling
-
J. Levinson, A. Akkerman, M. Victoria, M. Hass, D. Ilberg, M. Alluralde, R. Henneck, and Y. Lifshitz, "New Insight into Proton-Induced Latchup: Experiment and Modeling," Applied Physics Letters, Vol. 63, 1993, pp. 2952-2954.
-
(1993)
Applied Physics Letters
, vol.63
, pp. 2952-2954
-
-
Levinson, J.1
Akkerman, A.2
Victoria, M.3
Hass, M.4
Ilberg, D.5
Alluralde, M.6
Henneck, R.7
Lifshitz, Y.8
-
10
-
-
0030172838
-
Numerical modelling of mechanisms involved in latchup triggering by laser beam
-
P. Foulliat, H. Lapuyade, A. Touboul, J. P. Dom, and R. Gaillard, "Numerical Modelling of Mechanisms Involved in Latchup Triggering by Laser Beam," IEEE Transactions on Nuclear Science, Vol. 43, 1996, pp. 944-951.
-
(1996)
IEEE Transactions on Nuclear Science
, vol.43
, pp. 944-951
-
-
Foulliat, P.1
Lapuyade, H.2
Touboul, A.3
Dom, J.P.4
Gaillard, R.5
-
11
-
-
0032095440
-
Microbeam mapping of single event latchups and single event upset in CMOS SRAMs
-
June
-
J. Barak, E. Adler, B. E. Fischer, M. Schlogl, and S. Metzger, "Microbeam Mapping of Single Event Latchups and Single Event Upset in CMOS SRAMs," IEEE Transactions on Nuclear Science, Vol. 45, No. 3, June 1998, pp. 1595-1602.
-
(1998)
IEEE Transactions on Nuclear Science
, vol.45
, Issue.3
, pp. 1595-1602
-
-
Barak, J.1
Adler, E.2
Fischer, B.E.3
Schlogl, M.4
Metzger, S.5
-
12
-
-
0015770573
-
Latchup in CMOS integrated circuits
-
Dec.
-
B.L. Gregory, and B.D. Shafer, "Latchup in CMOS Integrated Circuits," IEEE Trans. On Nuclear Science, NS-20, Dec. 1973, pp.293-299.
-
(1973)
IEEE Trans. on Nuclear Science
, vol.NS-20
, pp. 293-299
-
-
Gregory, B.L.1
Shafer, B.D.2
-
15
-
-
0020909950
-
Epitaxial layer enhancement of N-well guard rings for CMOS circuits
-
Dec.
-
R. Troutman, "Epitaxial Layer Enhancement of N-Well Guard Rings for CMOS Circuits," IEEE Trans. On Elec. Dev. Letters, Vol ED-4, Dec. 1983, pp.438-440.
-
(1983)
IEEE Trans. on Elec. Dev. Letters
, vol.ED-4
, pp. 438-440
-
-
Troutman, R.1
-
16
-
-
0020704130
-
A transient analysis of latchup in bulk CMOS
-
Feb.
-
R. R. Troutman, and H.P. Zappe, "A Transient Analysis of Latchup in Bulk CMOS, IEEE Trans. Elec. Dev., ED-30, Feb. 1983, pp. 170-179.
-
(1983)
IEEE Trans. Elec. Dev.
, vol.ED-30
, pp. 170-179
-
-
Troutman, R.R.1
Zappe, H.P.2
-
18
-
-
0022757469
-
Transmission line modeling of substrate resistance and CMOS latchup
-
July
-
R. R. Troutman and M.J. Hargrove, "Transmission Line Modeling of Substrate Resistance and CMOS Latchup," IEEE Trans. Elec. Dev., July 1986.
-
(1986)
IEEE Trans. Elec. Dev.
-
-
Troutman, R.R.1
Hargrove, M.J.2
-
19
-
-
28744434587
-
Retrograde well and epitaxial thickness optimization for shallow- and deep-trench collar merged isolation and node Trench SPT cell and CMOS Logic Technology
-
S. Voldman, M. Marceau, A. Baker, E. Adler, S. Geissler, J. Slinkman, J. Johnson, and M. Paggi, "Retrograde well and epitaxial thickness optimization for shallow- and deep-trench collar merged isolation and node Trench SPT cell and CMOS Logic Technology," International Electron Device Meeting (IEDM) Technical Digest, 1992, pp.811-815.
-
(1992)
International Electron Device Meeting (IEDM) Technical Digest
, pp. 811-815
-
-
Voldman, S.1
Marceau, M.2
Baker, A.3
Adler, E.4
Geissler, S.5
Slinkman, J.6
Johnson, J.7
Paggi, M.8
-
21
-
-
0029405952
-
MeV implants boost device design
-
Nov.
-
S. Voldman, "MeV Implants Boost Device Design," IEEE Circuits and Devices, Vol. 11, No. 6, Nov. 1995, pp. 8-16.
-
(1995)
IEEE Circuits and Devices
, vol.11
, Issue.6
, pp. 8-16
-
-
Voldman, S.1
-
22
-
-
0024607604
-
Improvements of CMOS latchup using a high energy buried layer
-
March
-
H. Y. Lin, and C. H. Ting, "Improvements of CMOS latchup using a high energy buried layer," Nuclear Instrumentation Methods Phys. Review, Vol. B38/39, March 1989, pp. 960-964.
-
(1989)
Nuclear Instrumentation Methods Phys. Review
, vol.B38-39
, pp. 960-964
-
-
Lin, H.Y.1
Ting, C.H.2
-
24
-
-
78649876234
-
Epi-replacement in CMOS technology by high dose, high energy boron implantation into Cz substrates
-
K. K Bourdelle, Y. Chen, R. Ashton, L. Rubin, A. Agarwal, and W. Morris, "Epi-Replacement in CMOS Technology by High Dose, High Energy Boron Implantation into Cz Substrates," in International Electron Device Meeting (IEDM) Technical Digest, pp. 312-316.
-
International Electron Device Meeting (IEDM) Technical Digest
, pp. 312-316
-
-
Bourdelle, K.K.1
Chen, Y.2
Ashton, R.3
Rubin, L.4
Agarwal, A.5
Morris, W.6
-
25
-
-
84932120763
-
The influence of heavily doped buried layer implants on Electrostatic Discharge (ESD), latchup, and a silicon germanium heterojunction bipolar transistor in a BiCMOS SiGe technology
-
May
-
S. Voldman, L. Lanzerotti, W. Morris, and L. Rubin, "The Influence of Heavily Doped Buried Layer Implants on Electrostatic Discharge (ESD), Latchup, and a Silicon Germanium Heterojunction Bipolar Transistor in a BiCMOS SiGe Technology," in Proceedings of the International Reliability Physics Symposium, May 2004.
-
(2004)
Proceedings of the International Reliability Physics Symposium
-
-
Voldman, S.1
Lanzerotti, L.2
Morris, W.3
Rubin, L.4
-
26
-
-
0031707249
-
Latchup in CMOS
-
Invited Talk, April
-
M. Hargrove, S. Voldman, J. Brown, K. Duncan, and W. Craig, "Latchup in CMOS," Invited Talk, International Reliability Physics Symposium, April 1998, pp.269-278.
-
(1998)
International Reliability Physics Symposium
, pp. 269-278
-
-
Hargrove, M.1
Voldman, S.2
Brown, J.3
Duncan, K.4
Craig, W.5
-
27
-
-
3042603749
-
CMOS latchup
-
Invited Talk, Latchup Session, May
-
W. Morris, "CMOS Latchup," Invited Talk, Latchup Session, Proceedings of the International Reliability Physics Symposium, May 2003, pp.86-92.
-
(2003)
Proceedings of the International Reliability Physics Symposium
, pp. 86-92
-
-
Morris, W.1
-
28
-
-
3042603747
-
Deep trench guard ring structures and evaluation of the probability of minority carrier escape for ESD and latchup in advanced BiCMOS SiGe technology
-
National Chiao-Tung University, Hsin-chu City, Taiwan, November 12-13
-
A. Watson, S. Voldman, and T. Larsen, "Deep Trench Guard Ring Structures and Evaluation of the Probability of Minority Carrier Escape for ESD and Latchup in Advanced BiCMOS SiGe Technology," in Proceedings of the Taiwan Electrostatic Discharge Conference (T-ESDC), National Chiao-Tung University, Hsin-chu City, Taiwan, November 12-13, 2003, pp. 97-103.
-
(2003)
Proceedings of the Taiwan Electrostatic Discharge Conference (T-ESDC)
, pp. 97-103
-
-
Watson, A.1
Voldman, S.2
Larsen, T.3
-
29
-
-
84932172203
-
The influence of deep trench and substrate resistance on the latchup robustness in a BiCMOS silicon germanium technology
-
April 25-27
-
S. Voldman, and A. Watson, "The Influence of Deep Trench and Substrate Resistance on the Latchup Robustness in a BiCMOS Silicon Germanium Technology," Proceedings of the International Reliability Physics Symposium (IRPS), April 25-27, 2004.
-
(2004)
Proceedings of the International Reliability Physics Symposium (IRPS)
-
-
Voldman, S.1
Watson, A.2
-
30
-
-
84945207434
-
The effect of deep trench isolation, trench isolation, and sub-collector on the Electrostatic Discharge (ESD) robustness of Radio Frequency (RF) ESD STI-bound P+/N-well diodes in a BiCMOS silicon germanium technology
-
Sept.
-
th EOS/ESD Symposium, Sept. 2003, pp. 214-223.
-
(2003)
th EOS/ESD Symposium
, pp. 214-223
-
-
Voldman, S.1
-
31
-
-
17044389062
-
The effect of deep trench and sub-collector on the latchup robustness in BiCMOS silicon germanium technology
-
September 12-14, Montreal, Canada
-
A. Watson and S. Voldman, "The Effect of Deep Trench and Sub-collector on the Latchup Robustness in BiCMOS Silicon Germanium Technology, Bipolar Circuit Technology Meeting (BCTM), September 12-14, Montreal, Canada, 2004, pp. 172-175.
-
(2004)
Bipolar Circuit Technology Meeting (BCTM)
, pp. 172-175
-
-
Watson, A.1
Voldman, S.2
-
32
-
-
11344260412
-
The influence of polysilicon-filled deep trench and sub-collector implants on latchup robustness in RF CMOS and BiCMOS SiGe technology
-
October 18-20
-
S. Voldman, and A. Watson, "The Influence of Polysilicon-Filled Deep Trench and Sub-collector Implants on Latchup Robustness in RF CMOS and BiCMOS SiGe Technology," Proceedings of the Taiwan Electrostatic Discharge Conference, October 18-20, 2004, pp. 15-19.
-
(2004)
Proceedings of the Taiwan Electrostatic Discharge Conference
, pp. 15-19
-
-
Voldman, S.1
Watson, A.2
-
35
-
-
28744443921
-
Influence of silicon dioxide-filled Trench Isolation (TI) structure and implanted sub-collector on latchup robustness
-
S. Voldman, E. G. Gebreselasie, L. W. Lanzerotti, N. B. Feilchenfeld, S. A. St. Onge, A. Joseph, and J. Dunn, "Influence of Silicon Dioxide-filled Trench Isolation (TI) Structure and Implanted Sub-collector on Latchup Robustness," in Proceedings of the International Reliability Physics Symposium (IRPS), 2005.
-
(2005)
Proceedings of the International Reliability Physics Symposium (IRPS)
-
-
Voldman, S.1
Gebreselasie, E.G.2
Lanzerotti, L.W.3
Feilchenfeld, N.B.4
St. Onge, S.A.5
Joseph, A.6
Dunn, J.7
-
36
-
-
28744452785
-
Latchup in merged triple well technology
-
S. Voldman, E. G. Gebreselasie, D. Hershberger, D. S. Collins, N. B. Feilchenfeld, S. A. St. Onge, A. Joseph, and J. Dunn, "Latchup in Merged Triple Well Technology," in Proceedings of the International Reliability Physics Symposium (IRPS), 2005.
-
(2005)
Proceedings of the International Reliability Physics Symposium (IRPS)
-
-
Voldman, S.1
Gebreselasie, E.G.2
Hershberger, D.3
Collins, D.S.4
Feilchenfeld, N.B.5
St. Onge, S.A.6
Joseph, A.7
Dunn, J.8
-
37
-
-
15744385079
-
A review of CMOS latchup and Electrostatic Discharge (ESD) in bipolar complimentary MOSFET (BiCMOS) silicon germanium technologies: Part II-latchup
-
March/April
-
S. Voldman, "A Review of CMOS Latchup and Electrostatic Discharge (ESD) in Bipolar Complimentary MOSFET (BiCMOS) Silicon Germanium Technologies: Part II-Latchup," Journal of Microelectronics and Reliability, March/April 2005.
-
(2005)
Journal of Microelectronics and Reliability
-
-
Voldman, S.1
-
38
-
-
28744441554
-
Cable discharge event in local area network environment
-
Order No: 249812-001, July
-
Intel Corporation, "Cable Discharge Event in Local Area Network Environment," White Paper, Order No: 249812-001, July 2001.
-
(2001)
White Paper
-
-
-
41
-
-
28744435502
-
Multiple factors trigger discharge events in Ethernet
-
December 4
-
J. Deatherage, D. Jones, "Multiple factors trigger discharge events in Ethernet LANs Electronic Design, Vol. 48, No. 25, pp.111-116, December 4, 2000.
-
(2000)
LANs Electronic Design
, vol.48
, Issue.25
, pp. 111-116
-
-
Deatherage, J.1
Jones, D.2
-
43
-
-
0038649271
-
A Transmission Line Pulse (TLP) Picosecond Imaging Circuit Analysis (PICA) methodology for evaluation of ESD and latchup
-
Latchup Session, May
-
A. Weger, S. Voldman, F. Stellari, P. Song, P. Sanda, and M. McManus, "A Transmission Line Pulse (TLP) Picosecond Imaging Circuit Analysis (PICA) Methodology for Evaluation of ESD and Latchup," Latchup Session, in Proceedings of the International Reliability Physics Symposium, May 2003, pp. 99-104.
-
(2003)
Proceedings of the International Reliability Physics Symposium
, pp. 99-104
-
-
Weger, A.1
Voldman, S.2
Stellari, F.3
Song, P.4
Sanda, P.5
McManus, M.6
-
44
-
-
3042659380
-
Study of critical factors determining latchup sensitivity in ICs using emission microscopy
-
F.Stellari, P. Song, M. K. McManus, A. J. Weger, K. Chatty, M. Muhammad, and P. Sanda, "Study of Critical Factors Determining Latchup Sensitivity in ICs using Emission Microscopy," Proceeding of the International Symposium for Testing and Failure Analysis (ITSFA), 2003, pp. 19-24.
-
(2003)
Proceeding of the International Symposium for Testing and Failure Analysis (ITSFA)
, pp. 19-24
-
-
Stellari, F.1
Song, P.2
McManus, M.K.3
Weger, A.J.4
Chatty, K.5
Muhammad, M.6
Sanda, P.7
-
45
-
-
84932109015
-
Contention latchup
-
Latchup Session
-
J. Mechler, C. Brennan, J. Massucco, R. Rossi, and L. Wissel, "Contention Latchup," Latchup Session, Proceedings of the International Reliability Physics Symposium (IRPS), 2004, pp.126-129.
-
(2004)
Proceedings of the International Reliability Physics Symposium (IRPS)
, pp. 126-129
-
-
Mechler, J.1
Brennan, C.2
Massucco, J.3
Rossi, R.4
Wissel, L.5
|