THE INFLUENCE OF HEAVILY DOPED BURIED LAYER IMPLANTS ON ELECTROSTATIC DISCHARGE (ESD), LATCHUP, AND A SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTOR IN A BICMOS SIGE TECHNOLOGY

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 143-151

  Voldman, S ^a   Lanzerotti, L ^a   Morris, W ^b   Rubin, L ^c  

^a IBM MICROELECTRONICS   (United States)

^b Silicon Engineering Inc   (United States)

^c Axcelis Corporation   (United States)

Author keywords

ESD; Heavily Doped Buried Layer; Latchup; Silicon Germanium (SiGe)

Indexed keywords

BICMOS TECHNOLOGY; CMOS INTEGRATED CIRCUITS; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; ELECTROSTATICS; GERMANIUM; HETEROJUNCTIONS; SEMICONDUCTING SILICON; SILICON; SILICON ALLOYS; SILICON WAFERS;

BICMOS SIGE TECHNOLOGY; DOPED SUBSTRATES; ELECTROSTATIC DISCHARGE PROTECTION; ESD; HEAVILY DOPED BURIED LAYERS; LATCH-UPS; SILICON GERMANIUM; SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 84932120763     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315315     Document Type: Conference Paper

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