The influence of a silicon dioxide-filled trench isolation structure and implanted sub-collector on latchup robustness

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 112-120

  Voldman, S ^a   Gebreselasie, E ^a   Lanzerotti, L ^a   Larsen, T ^a   Feilchenfeld, N ^a   St Onge, S ^a   Joseph, A ^a   Dunn, J ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

Implanted Sub collector; Latchup; Silicon Germanium (SiGe); Trench Isolation (TI)

Indexed keywords

EID: 28744443921     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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