A review of CMOS latchup and electrostatic discharge (ESD) in bipolar complimentary MOSFET (BiCMOS) Silicon Germanium technologies: Part II-Latchup

Microelectronics Reliability

Volumn 45, Issue 3-4, 2005, Pages 437-455

  Voldman, Steven H ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; COST EFFECTIVENESS; ELECTRIC DISCHARGES; MOSFET DEVICES; PRODUCT DESIGN; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

DESIGN INTEGRATION; ELECTROSTATIC DISCHARGE (ESD); RADIO FREQUENCY; SEMICONDUCTOR QUALITY;

CMOS INTEGRATED CIRCUITS;

EID: 15744385079     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.12.001     Document Type: Article

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